Electrons must move faster at a pn junction. The root mean squared speed of electrons must increase as they move from one side to the other side of the junction. There must be a pressure exerted by a static voltage. This pressure must be described by a statistical process.
Electrons entering the p end of the pn junction with extra energy sit on the edge of the junction and become part of the pressure process. This is the reverse bias case. Electrons entering the n side of the pn junction with extra energy are conducted through the depletion region to the p side where they are conducted out of the diode.
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